Reliability Considerations for Advanced Microelectronics

Integrated vehicle health management: An approach to dealing with lifetime prediction considerations on relays

Scanning acoustic GHz-microscopy versus conventional SAM for advanced assessment of ball bond and metal interfaces in microelectronic devices

Fabrication of advanced probes for atomic force microscopy using focused ion beam

Trend of CMOS downsizing and its reliability

In this paper, CMOS downsizing trend into sub-70 nm node and further below is described. Downscaling of advanced CMOS devices have been significantly accelerated every time by the update of the ITRS roadmap. Now, on one hand, we can expect the realization of even sub-10 nm CMOS devices, but on the other hand, so many difficulties in technology for the downsizing are anticipated. In this paper, ...

Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part I

Compact model for expressing turn-off waveform for advanced trench gate IGBTs is proposed even under high current density condition. The model is analytically formulated only with device structure parameters so that no fitting parameters are required. The validity of the model is confirmed with TCAD simulation for 1.2 kV to 6.5 kV class IGBTs. The proposed turn-off model is sufficiently accurat...